High side mosfet driver charge pump

Description. The MAX drives high-side, n-channel power MOSFETs to provide battery power-switching functions in portable equipment. The n-channel power MOSFETs typically have one-third the on-resistance of p-channel MOSFETs of similar size and cost. An internal micropower regulator and charge pump generate the high-side drive output voltage, while . 6 rows · High Voltage Gate Driver with internal charge pump for single N-Channel MOSFET with V GS. strap and charge pump technique providing excellent switch-ing speed and steady state operation allowing the use of an N-channel MOS-gated power device as a high-side switch. This improves system efficiency, expands voltage range, and reduces the cost of the power device required. Overshoot Voltage Reduction Using IGBT Modules with Special Drivers.

strap and charge pump technique providing excellent switch-ing speed and steady state operation allowing the use of an N-channel MOS-gated power device as a high-side switch. This improves system efficiency, expands voltage range, and reduces the cost of the power device required. Overshoot Voltage Reduction Using IGBT Modules with Special Drivers. The MIC high-side MOSFET driver is designed to operate at frequencies up to kHz (5 kHz PWM for 2% to % duty cycle) and is an ideal choice for high speed applications such as motor control, SMPS (switch mode power supplies), and applications using IGBTs. The MIC can also operate as a circuit breaker with or without automatic retry. the high-sideswitch off-time,allowing the BOOT capacitor to fully charge. In non-synchronousapplications operating in DCM, this condition may not be permissible. When the inductor current reaches 0 A during the high-sideswitch off-time,the PH node voltage is no longer clamped to one diode drop below ground.

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